Titanium Disilicide, TiSi2

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Titanium Disilicide, TiSi2

Ts'ebetso ea silicone ea titanium: khanyetso e ntle ea khase mochesong o phahameng, e sebelisoang e le lisebelisoa tse sa keneleng mocheso, 'mele o futhumatsang mocheso o phahameng, jj.


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Silicide ea titanium, boima ba limolek'hule: 116.1333, CAS Nomoro: 12039-83-7, MDL No .: mfcd01310208

EINECS Nomoro: 234-904-3.

Ts'ebetso ea silicone ea titanium: khanyetso e ntle ea khase mochesong o phahameng, e sebelisoa e le thepa e sa keneleng mocheso, 'mele o futhumatsang mocheso o mongata joalo-joalo. Titanium silicide e sebelisoa haholo hekeng, mohloli / metsi, khokahano le ohmic ea tšepe ea oxide semiconductor (MOS), tšepe oxide semiconductor tšebetso ea tšebetso transistor (MOSFET) le mohopolo o matla oa phihlello o sa sebetseng (DRAM)

1) Ho lokisitsoe mokelikeli oa thibelo ea titanium silicide. Sesebelisoa se sebelisang mokhoa oa ho itokisa oa mokelikeli oa titanium silicide barrier se kenyeletsa sebaka se seng sa silicide le sebaka sa silicide se arohaneng le sebaka se itšehlang thajana, 'me bokaholimo bo kaholimo ba sesebelisoa bo koahetsoe ka lera la sehlabelo sa oxide.

2) Ho hlophisitsoe mofuta oa in-situ synthesized titanium silicide (Ti5Si3) likaroloana tse matlafalitsoeng tsa aluminium titanium carbide (Ti3AlC2) matrix composite e neng e hlophisitsoe. Sesebelisoa sa aluminium titanium carbide / titanium silicide se nang le bohloeki bo phahameng le matla a phahameng se ka lokisoa ka mocheso o tlase le nako e khuts'oane.

3) Khalase e entsoeng ka likarolo tse ngata ea titanium e koahetsoeng e ile ea lokisoa. Filimi e tšesaane e beoa holim'a substrate e tloaelehileng ea khalase kapa filimi ea silicon e behiloe lipakeng tsa bona. Matla a ts'ireletso le ts'enyeho ea lik'hemik'hale ea khalase e koahetsoeng a ka ntlafatsoa ka ho hlophisa filimi e kopaneng ea titanium silicide le silicon carbide kapa ho eketsa khabone kapa naetrojene e nyane ka har'a filimi. Moqapi ona o amana le mofuta o mocha oa khalase e koahetsoeng e kopanyang mesebetsi ea ho fifatsa le ho futhumatsa mocheso le khalase ea radiation e tlase. 4) Ho lokiselitsoe karolo ea semiconductor, e kenyeletsang substrate ea silicon, eo ho eona ho thehoang heke, mohloli le pompo ea metsi. , ho theoa lera le sireletsang pakeng tsa heke le karoloana ea silicon, heke e entsoe ka lera la polysilicon lera la insulating le lera la titanium silicide mokokotlong oa polysilicon, lera le sireletsang le thehoa holim'a mokelikeli oa titanium silicide, le tšireletso lera, titanium silicide lera, polysilicon lera le li sireletsang serameng li lika-likelitsoe ke mekato e meraro ea lera, e leng silicon nitride gap wall layer, hydrophilic layer le silicon oxide gap lekhalo leboteng ho tloha kahare ho ea kantle. Lera la titanium silicide le thehiloe mohloling oa eleketrode le drain electrode, lera la kahare la dielectric le thehiloe holim'a silicone substrate, mme ho buloa ha fensetere ho ikopanya ho thehiloe kahareng e ka hare ea dielectric. Ka ho amohela leano la tekheniki, mofuta oa ts'ebeliso o ka koahela ka botlalo grid electrode le terata fensetereng ea mabitso, 'me ho ke ke ha ba le ketsahalo e khuts'oane ea potoloho.

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